Design of SRAM Cell and Array Using Adiabatic Logic
1M. Mayilsamy, M. Saravanakumar, V. Rukkumani, B. Sharmila and K. Srinivasan
A novel SRAM cell together with higher discharge management and increased memory retention competence is planned. At this juncture, the memory array designed victimisation the planned SRAM unit comprise every part of its word lines, in addition to bit lines obsessed adiabatically victimisation differential cascode and pre-resolved adiabatic logic (DCPAL), in addition it functions like a buffer in case of the memory group. At this point, the VT disparity will be effectively managed by means of adjusting the ground-line, in addition to power-line voltage of the SRAM cell. Moreover, the styles are enforced victimisation 45-nm technology representations in operation at a provide voltage of zero.
Differential Cascode and Pre-resolved Adiabatic Logic, VT Variation, Positive-feedback Adiabatic Logic nMOS Technology.