Study of the Influence of Ultrasonic Waves on Electro-physical Characteristics of Radiation Receivers
1Gaibov Abdumalik Gaybullaevich, Vakhobov Kutbiddin Iloviddinovich, Mipkomilova Marguba Sunnatullaevna, Juraev Utkir Ergashevich and Ibragimova Barno Vokhidovna
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Abstract:
The physical processes of capture and ejection of charge carriers in Si-n-p radiation detectors, affecting their electro-physical characteristics (current-voltage), are investigated. It was shown that after ultrasonic treatment of Si detectors, the height of the potential barrier of p-n junctions formed by the presence of local clusters of impurity atoms decreased.
Keywords:
Paper DetailsSi Radiation Detectors, Large-scale and Small-scale Local Clusters of Impurity Atoms, Ultrasound, Height of the Potential Barrier of the PN Junction.
Volume24
IssueIssue 5
Pages3517-3522